smd type ic smd type ic KRF7313 features generation v technology ultra low on-resistance dual n-channel mosfet surface mount fully avalanche rated absolute maximum ratings ta = 25 parameter symbol rating unit drain- source voltage v ds 30 gate-to-source voltage v gs 20 continuous drain current, ta = 25 *3 i d 6.5 continuous drain current,t c =70 *3 i d 30 pulsed drain current i dm 2.5 maximum power dissipation ta = 25 *3 2 maximum power dissipation ta = 70 *3 1.3 single pulse avalanche energy *4 e as 82 mj avalanche current i ar 4a repetitive avalanche energy e ar 0.2 mj peak diode recovery dv/dt*2 dv/dt 5.8 v/ns operating junction and storage temperature range t j ,t stg -55 to + 150 maximum junction-to-ambient *3 r ja 62.5 /w *1 repetitive rating; pulse width limited by max. junction temperature. * 2i sd 4.0a, d i /d t 74a/ s, v dd v (br)dss ,t j 150 *3 surface mounted on fr-4 board, t 10sec. *4 starting t j =25 ,l=10mh,r g =25 ,i as =4.0a a p d v w smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d =250a 30 v breakdown voltage temp. coefficient v(br)dss / t j i d = 1ma,reference to 25 0.022 v/ v gs = 10v, i d = 5.8a*1 0.023 0.029 v gs =4.5v,i d = 4.7a*1 0.032 0.046 gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 1.0 v forward transconductance g fs v ds = 15v, i d =5.8a*1 14 s v ds = 24v, v gs =0v 1.0 v ds = 24v, v gs =0v,t j =55 25 gate-to-source forward leakage v gs = 20v 100 gate-to-source reverse leakage v gs =-20v -100 total gate charge q g i d =5.8a 22 33 gate-to-source charge q gs v ds = 15v 2.6 3.9 gate-to-drain ("miller") charge q gd v gs = 10v,*1 6.4 9.6 turn-on delay time t d(on) v dd = 15v 8.1 12 rise time t r i d = 1.0a 8.9 13 turn-off delay time t d(off) r g =6.0 26 39 fall time t f r d =15 *1 17 26 input capacitance c iss v gs =0v 650 output capacitance c oss v ds = 25v 320 reverse transfer capacitance c rss f = 1.0mhz 130 continuous source current body diode) i s 2.5 pulsed source current body diode) *2 i sm 30 diode forward voltage v sd t j =25 ,i s =1.7a,v gs =0v*1 0.78 1.0 v reverse recovery time t rr t j =25 ,i f =1.7a 45 68 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 58 87 c *1 pulse width 300 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax i dss ns r ds(on) static drain-to-source on-resistance drain-to-source leakage current a pf a i gss na nc smd type ic smd type ic KRF7313 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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